Influence of trench etching on super junction devices fabricated by trench fillingYAMAUCHI, Shoichi; HATTORI, Yoshiyuki; YAMAGUCHI, Hitoshi et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 193-196, isbn 4-88686-060-5, 4 p.Conference Paper

Implementation of Double Patterning process toward 22-nm nodeYAEGASHI, Hidetami; NISIMURA, Eiichi; YABE, Kazuo et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7520, issn 0277-786X, isbn 978-0-8194-7909-9 0-8194-7909-8, 75201E.1-75201E.9Conference Paper

Design of a 200V super junction MOSFET with n-buffer regions and its fabrication by trench fillingHATTORI, Yoshiyuki; NAKASHIMA, Kyoko; KUWAHARA, Makoto et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 189-192, isbn 4-88686-060-5, 4 p.Conference Paper

The Important Challenge to Extend Spacer DP process towards 22nm and beyondOYAMA, Kenichi; NISIMURA, Eiichi; YAMAJI, Tomohito et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7639, issn 0277-786X, isbn 978-0-8194-8053-8 0-8194-8053-3, 763907.1-763907.6, 2Conference Paper

Defect-less trench filling of epitaxial Si growth by H₂ annealingYAMAUCHI, Shoichi; URAKAMI, Yasushi; TUJI, Nobuhiro et al.International symposium on power semiconductor devices & ICS. 2002, pp 133-136, isbn 0-7803-7318-9, 4 p.Conference Paper